¹Dept. of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC

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Abstract—In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect transistor with block oxide (bFDSOI-FET) is proposed to investigate the influence of block oxide height (HBO) on the electrical characteristics. According to the two-dimensional (2-D) simulation results, the characteristics of the proposed structure are similar to those of the ultra-thin (UT) SOIFET, due to the presence of block oxide enclosed silicon body. Moreover, although the high HBO associated with the thick silicon body results in somewhat poor device performance because of increased charge sharing from the source/drain (S/D), the self-heating effects (SHEs) for the bFDSOI-FET can be reduced.

Index Terms—FDSOI, block oxide, charge sharing, selfheating.

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Cite: Jyi-Tsong Lin, Yi-Chuen Eng, "Analysis of Block Oxide Height Variations for a 40nm Gate Length bFDSOI-FET," Journal of Computers vol. 3, no. 5, pp.41-45, 2008.